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| Semiconductor STK0250D Advanced Power MOSFET SWITCHING REGULATOR APPLICATIONS Features * * * * High Voltage : BVDSS=500V(Min.) Low Crss : Crss=6.5pF(Typ.) Low gate charge : Qg=8.5nC(Typ.) Low RDS(on) : RDS(on)=3.3(Max.) Type NO. STK0250D Marking STK0250 Package Code D-PAK Ordering Information Outline Dimensions unit : mm 6.50~6.70 5.10~5.50 1.18 Max. 2.10~2.50 7.77~7.97 1.15 Max. 0.83 Max. 2.30 Typ. 2.30 Typ. 0.55 Max. 1 2 3 PIN Connections 1. Gate 2. Drain 3. Source KSD-T6O001-000 1 STK0250D Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) Drain current (Pulsed) * (Tc=25C) Symbol VDSS VGSS ID (Tc=25) (Tc=125) IDP PD IAS EAS IAR EAR TJ Tstg Rating 500 30 2.0 1.7 8.0 35 2.0 59 2.0 3.0 150 -55~150 Unit V V A A A W A mJ A mJ C Drain Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Characteristic Thermal resistance Junction-case Junction-ambient Symbol Rth(J-C) Rth(J-a) Typ. - Max 3.57 62.5 Unit /W KSD-T6O001-000 2 STK0250D Electrical Characteristics Characteristic Drain-source breakdown voltage Gate-threshold voltage Drain-source leakage current Gate-source leakage Drain-Source on-resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge (Tc=25C) Symbol BVDSS VGS(th) IDSS IGSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250A, VGS=0 ID=250A, VDS= VGS VDS=500V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=1.0A VDS=10V, ID=1.0A VGS=0V, VDS=25V, f=1MHz Min. 500 3.0 - Typ. 3.1 1.4 268 13 6.5 8.5 10.2 19 10.2 8.5 1.7 3.0 Max. 5.0 1 100 3.4 402 19.5 9.8 12.8 2.6 4.5 Unit V V A nA S pF VDD=250V, VGS=10V ID=2.0A, RG=25 - - ns VDD=250V, VGS=10V ID=2.0A - nC - Source-Drain Diode Ratings and Characteristics Characteristic Continuous source current Source current (Pulsed) Forward voltage Reverse recovery time Reverse recovery charge (Tc=25C) Symbol IS ISP VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=2.0A Is=2.0A, VGS=0V dis/dt=100A/us Min - Typ 200 0.7 Max 2 8 1.4 - Unit A V ns uC Note ; Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature L=26.5mH, IAS=2.0A, VDD=50V, RG=25 Pulse Test : Pulse Width 300us, Duty cycle 2% Essentially independent of operating temperature KSD-T6O001-000 3 STK0250D Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS : - Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 Capacitance - VDS Fig. 6 VGS - QG KSD-T6O001-000 4 STK0250D Fig. 7 VDSS - TJ Fig. 8 RDS(on) - TJ C C Fig. 9 ID - TC Fig. 10 Safe Operating Area * KSD-T6O001-000 5 STK0250D Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform Fig. 13 EAS Test Circuit & Waveform KSD-T6O001-000 6 STK0250D Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform KSD-T6O001-000 7 STK0250D The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KSD-T6O001-000 8 |
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